Aluminum Chloride Msds

Aluminium Nitride

History

AlN was first synthesized in 1877, but it was not until the middle of the 1980s that its potential for application in microelectronics was realized due to its relative high thermal conductivity for an electrical insulating ceramic (70-210 Wm1K1 for polycrystalline material, and as high as 285 Wm1K1 for single crystals).

Stability and chemical properties

Aluminium nitride is stable at high temperatures in inert atmospheres and melts at 2800 C. In a vacuum, AlN decomposes at ~1800 C. In the air, surface oxidation occurs above 700C, and even at room temperature, surface oxide layers of 5-10 nm have been detected. This oxide layer protects the material up to 1370C. Above this temperature bulk oxidation occurs. Aluminium nitride is stable in hydrogen and carbon dioxide atmospheres up to 980C.

The material dissolves slowly in mineral acids through grain boundary attack, and in strong alkalies through attack on the aluminium nitride grains. The material hydrolyzes slowly in water. Aluminium nitride is resistant to attack from most molten salts, including chlorides and cryolite.

Manufacture

AlN is synthesized by the carbothermal reduction of alumina or by direct nitridation of aluminium. The use of sintering aids and hot pressing is required to produce a dense technical grade material.

Applications

Metallization methods are available to allow AlN to be used in electronics applications similar to those of alumina and beryllium oxide.

Currently there is much research into developing light-emitting diodes to operate in the ultraviolet using the gallium nitride based semiconductors and, using the alloy aluminum gallium nitride, wavelengths as short as 250 nm have been achieved. In May 2006 an inefficient AlN LED emission at 210 nm was reported.

Among the applications of AlN are

opto-electronics,

dielectric layers in optical storage media,

electronic substrates, chip carriers where high thermal conductivity is essential,

military applications,

as a crucible to grow crystals of gallium arsenide,

steel and semiconductor manufacturing.

Epitaxially grown thin film crystalline aluminium nitride is also used for surface acoustic wave sensors (SAW’s) deposited on silicon wafers because of the AlN’s piezoelectric properties. One application is an RF filter used in mobile phones called a thin film bulk acoustic resonator (FBAR). This is a MEMS device that uses aluminium nitride sandwiched between two metal layers.

See also

Boron nitride

Aluminium phosphide

Indium nitride

References

^ “Aluminum Nitride”. Accuratus. http://accuratus.com/alumni.html. 

^ Ioffe data archive

^ L. I. Berger (1997). Semiconductor materials. CRC Press. pp. 123-124. ISBN 0849389127. http://books.google.com/books?id=Ty5Ymlg_Mh0C&pg=PA123. 

^ Y. Taniyasu et al. (2006). “An aluminium nitride light-emitting diode with a wavelength of 210 nanometres”. Nature 441: 325. doi:10.1038/nature04760. http://physicsworld.com/cws/article/news/24926. 

^ “ACPF-7001: Agilent Technologies Announces FBAR Filter for U.S. PCS Band Mobile Phones and Data Cards”. wirelessZONE. EN-Genius Network Ltd.. 2002-05-27. http://www.en-genius.net/site/zones/wirelessZONE/product_reviews/hfp_052702. Retrieved 2008-10-18. 

External links

Ioffe data archive

Electronic Structure of AlN

MSDS (University of Oxford)

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  Aluminium compounds

AlAs  AlB2  AlB12  Al(BH4)3  AlBr3  AlCl  AlCl3  AlF  AlF3  AlH3  AlI3  AlN  Al(NO3)3  AlO  Al(OH)3  AlON  AlP  AlPO4  AlSb  Al2(MoO4)3  Al2O3  Al2S3  Al2(SO4)3  Al2Se3  Al2SiO5  Al4C3

Categories: Nitrides | Aluminium compounds | Semiconductor materials | Piezoelectric materials | III-V compounds | Light-emitting diode materialsHidden categories: Chemboxes which contain changes to watched fields
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